1 edition 1.1 february 2000 1,550nm mqw-dfb modulator integrated laser FLD5F10NP-A features modulator integrated dfb laser diode module cw operation of dfb laser section ?modulation voltage applied only to modulator section ?high speed butterfly package with smp connection built-in optical isolator, monitor photodiode, thermistor, and thermo-electric cooler /4 shifted mqw-dfb chip application this mi laser is intended for for short reach applications (<5km) at 10gb/s. description the modulator integrated dfb laser (mi dfb laser) has an electro-absorption modulator monolithically integrated with a conventional distributed feed-back (dfb) /4 shifted multi quantumwell (mqw) laser. the modulation voltage is applied to the modulator section while the laser section operates cw allowing extremely low wavelength chirping. extinction ratios of more than 8.3 db can be achieved with 2.6 vp-p modulation. the mi laser is installed in a butterfly type package. the module incorporates a highly stable yag welded optical coupling system. the module includes an optical isolator, monitor photodiode, thermistor and a thermo-electric cooler. parameter symbol condition ratings optical output power p f 5 cw mw laser forward current i f 150 cw ma unit absolute maximum ratings (t op =25 c, unless otherwise specified) 260 c lead soldering time t sold 10 sec laser reverse voltage v r 2 v cw photodiode reverse voltage v dr 10 v - modulator forward voltage v m -5 to +1 v cw 1ma photodiode forward current i df - tec voltage v c 2.5 v - tec current i c 1.4 a - storage temperature t stg -40 to +70 - c - operating case temperature t op -20 to +65 c
2 1,550nm mqw-dfb modulator integrated laser FLD5F10NP-A edition 1.1 february 2000 parameter symbol optical & electrical characteristics (t l = t set, t c = 25 c, bol, unless otherwise specified) note (1) fujitsu test system 9.95328gb/s, prbs, 2 23 -1, if=iop, vm=vo and (vo-vmod) dispersion=82ps/nm, dispersion penalty at bit error rate = 1.0e-10 note (2) fujitsu test system 9.95328gb/s, prbs, 2 23 -1, if=iop, vm=vo and (vo-vmod) unit limits max. type min. test condition dispersion penalty dp db 2 -- note (1) sidemode suppression ratio ssr db - 35 - note (2) peak wavelength p nm 1565 - 1530 note (2) fall time t f ps 40 -20 note (2), 20 to 80% rise time t r ps 40 -20 note (2), 20 to 80% rf return loss s 11 db 8- - f=cd-5ghz, 50 ? test set, v m =vo, i f =i op rf return loss s 11 db 3- - f=5-10ghz, 50 ? test set, v m =vo, i f =i op cut-off frequency s 21 ghz 10 - - -3db bandwidth, v m =vo-0.5(vmod), i f =i op optical output power (avg. power) pf dbm - -2 - note (1) forward voltage v f v - 2.0 1.4 cw, i f =i op , v m =vo optical isolation i sdb - 25 35 tc=-20 to +65 c input impedance z ? - - 50 cw, v m <0 threshold current i th ma -30 - cw, v m =vo on level modulation v o v -1 0 -0.3 - modulator drive voltage v mod v - 2.6 - (vo-vmod)>=-3.3v, rext=8.3db relative intensity noise rin db/hz - -120 - f=10 ghz, v m =vo, i f =i op, orl=>24db operating current i op ma 50 100 - cw, v m =vo extinction ratio r ext db - - 8.3 f=10gb/s, i f =i op , v m =vo/(vo-vmod)
3 1,550nm mqw-dfb modulator integrated laser FLD5F10NP-A edition 1.1 february 2000 10 gb/s prbs 2 23 -1 i f =i op v m =vo/(vo-2) v o = -0.7v t l = +25 c pf v f fig. 1 lasing spectrum wavelength (span=1 nm/div, res.=0.1nm) fig. 2 forward current vs. output power and forward current vs. forward voltage forward current, i f (ma) output power, pf (mw) monitor current (ma) 3 4 2 1 20 40 60 80 0 0 0.3 0.4 0.2 0.1 0 relative intensity (10 db/div.)
4 1,550nm mqw-dfb modulator integrated laser FLD5F10NP-A edition 1.1 february 2000 fig. 3 extinction ratio vs. modulation voltage fig. 4 cut-off frequency (s21) frequency (ghz) modulation voltage (v) minus extinction ratio (db) relative output (db) -10 -5 0 -15 -20 -25 0.5 1.0 1.5 2.0 2.5 0 5101520 0 -12 -9 -6 -3 0 3 6 9 12 fig. 5 rf return loss (s11) fig. 6 transmission characteristics 9.95328gb/s prbs 2 23 -1 0 km 800ps/nm frequency (ghz) average received optical power (dbm) return loss (db) bit error rate 10 -12 10 -10 10 -8 10 -6 10 -4 5101520 -15 -10 0 -40 -30 -20 -10 0 10 20 30 40
5 notes 1,550nm mqw-dfb modulator integrated laser FLD5F10NP-A edition 1.1 february 2000
6 fujitsu compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put this product into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. 1,550nm mqw-dfb modulator integrated laser FLD5F10NP-A for further information please contact: fujitsu compound semiconductor, inc. americas & r.o.w. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. phone: (408) 232-9500 fax: (408) 428-9111 www.fcsi.fujitsu.com fme, qdd fujitsu microelectronics europe gmbh quantum devices division network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 fujitsu quantum devices singapore pte ltd. hong kong branch rm. 1101, ocean centre, 5 canton rd. tsim sha tsui, kowloon, hong kong tel: +852-23770226 fax: +852-23763269 fujitsu quantum devices limited global business division global sales support department shinjuku daiichiseimei building, 2-7-1 nishishinjuku, shinjuku-ku, tokyo, 163-0721, japan tel: +81-3-5322-3356 fax: +81-3-5322-3398 fujitsu limited reserves the right to change products and specifications without notice. the information does not convey any license under rights of fujitsu limited or others. 2000 fujitsu compound semiconductor, inc. printed in u.s.a. fcsi0200m200 edition 1.1 february 2000 tec th 10k ? 50 ? 76 8 54321 *l 23 13 29.97 1.70 5.08 17.24 15.24 2.54 7-0.5 pin 1 4-?.67 pin 7 3.99 0.5 5.47 8.17 7-0.15 26.04 20.83 ?.16 2.54 10.0 1.25 12.7 5.08 14.6 ?.9 5.08 ?.2 8.89 top view # pin designations 1 temperature monitor 2 temperature monitor 3 laser dc bias (+) 4 monitor (anode) 5 monitor (cathode) 6 tehp (+) 7 tehp (-) 8 modulation (-) 22.00 * note pigtail length (l) shall be specified in the detail (individual) specification, if it is special. l=900 min. for standard 4.83 po ?p?package unit: mm
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